AOD417
P-Channel Enhancement Mode Field
Effect Transistor
General Description
The AOD417 uses advanced trench technology to provide excellent R
DS(ON)
, low gate charge and low
gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for
high current load applications.
Features
V
DS
(V) = -30V
I
D
= -25A
(V
GS
= -10V)
R
DS(ON)
< 34mΩ (V
GS
= -10V)
R
DS(ON)
< 55mΩ (V
GS
= -4.5V)
D
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
B,G
Current
Pulsed Drain Current
Avalanche Current
C
C
Maximum
-30
±20
-25
-20
-60
-14
30
50
25
2.5
1.6
-55 to 175
Units
V
V
A
A
mJ
W
W
°
C
V
GS
T
A
=25°
C
C
G
T
A
=100°
C
I
D
I
DM
I
AR
E
AR
P
D
P
DSM
T
J
, T
STG
Repetitive avalanche energy L=0.3mH
T
C
=25°
C
Power Dissipation
Power Dissipation
B
C
T
C
=100°
T
A
=25°
C
C
T
A
=70°
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
A
Maximum Junction-to-Ambient
Maximum Junction-to-Case
D
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
16.7
40
2.5
Max
25
50
3
Units
°
C/W
°
C/W
°
C/W
1/6
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
