AOD4180
80V N-Channel MOSFET
General Description
The AOD4180 is fabricated with SDMOS
TM
trench technology that combines excellent R
DS(ON)
with low gate
charge and low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal
technology is well suited for PWM, load switching and general purpose applications.
Features
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
= 7V)
80V
54A
< 14mΩ
< 18mΩ
D
G
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
G
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current
C
C
C
Maximum
80
±25
54
42
160
10
8
45
100
150
75
3.1
2
-55 to 175
Units
V
V
A
T
C
=25°C
T
C
=100°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
I
DSM
I
AS
, I
AR
E
AS
, E
AR
P
D
P
DSM
T
J
, T
STG
A
A
mJ
W
W
°C
Avalanche energy L=0.1mH
Power Dissipation
Power Dissipation
B
T
C
=25°C
T
C
=100°C
T
A
=25°C
A
T
A
=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
AD
Maximum Junction-to-Ambient
Maximum Junction-to-Case
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
12
33
0.8
Max
15
40
1
Units
°C/W
°C/W
°C/W
1/7
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
