AOD418 参数 Datasheet PDF下载

AOD418/AOI418

30V N-Channel MOSFET

General Description

The AOD418/AOI418 uses advanced trench technology to provide excellent R

DS(ON)

, low gate charge and low gate

resistance. With the excellent thermal resistance of the DPAK/IPAK package, this device is well suited for high

current load applications.

Features

V

DS

I

D

(at V

GS

= 10V)

R

DS(ON)

(at V

GS

= 10V)

R

DS(ON)

(at V

GS

= 4.5V)

30V

36A

< 7.5mΩ

< 11mΩ

D

G

S

Absolute Maximum Ratings T

A

=25°C unless otherwise noted

Symbol

Parameter

V

DS

Drain-Source Voltage

V

GS

Gate-Source Voltage

Continuous Drain

Current

G

Pulsed Drain Current

Continuous Drain

Current

Avalanche Current

C

Avalanche energy L=0.1mH

Power Dissipation

Power Dissipation

B

C

C

Maximum

30

±20

36

28

125

13.5

10.5

27

36

50

25

2.5

1.6

-55 to 175

Units

V

V

A

T

C

=25°C

T

C

=100°C

T

A

=25°C

T

A

=70°C

I

D

I

DM

I

DSM

I

AS

, I

AR

E

AS

, E

AR

P

D

P

DSM

T

J

, T

STG

A

A

mJ

W

W

°C

T

C

=25°C

T

C

=100°C

T

A

=25°C

A

T

A

=70°C

Junction and Storage Temperature Range

Thermal Characteristics

Parameter

A

Maximum Junction-to-Ambient

AD

Maximum Junction-to-Ambient

Maximum Junction-to-Case

Symbol

t

≤

10s

Steady-State

Steady-State

R

θJA

R

θJC

Typ

16

41

2.5

Max

20

50

3

Units

°C/W

°C/W

°C/W

1/6

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