AOD421
P-Channel Enhancement Mode Field
Effect Transistor
General Description
The AOD421 uses advanced trench technology to provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 2.5V. This device is suitable for load switching. It is ESD
protected.
Features
V
DS
(V) = -20V
I
D
= -12.5 A (V
GS
= -10V)
R
DS(ON)
< 75mΩ (V
GS
= -10V)
R
DS(ON)
< 95mΩ (V
GS
= -4.5V)
R
DS(ON)
< 145mΩ (V
GS
= -2.5V)
D
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
G
Current
Pulsed Drain Current
Power Dissipation
Power Dissipation
B
Maximum
-20
±12
-12.5
-8.9
-30
18.8
9.4
2
1.33
-55 to 175
Units
V
V
A
V
GS
T
A
=25°
C
T
A
=70°
C
C
I
D
I
DM
P
D
P
DSM
T
J
, T
STG
T
C
=25°
C
T
C
=100°
C
T
A
=25°
C
A
W
W
°
C
T
A
=70°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
Maximum Junction-to-Case
B
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
23
50
6
Max
28
60
8
Units
°
C/W
°
C/W
°
C/W
1/6
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
