AOD468/AOI468
300V,11.5A N-Channel MOSFET
General Description
General Description
The AOD468 & AOI468 have been fabricated using an advanced high voltage MOSFET process that is designed
to deliver high levels of performance and robustness in popular AC-DC applications.By providing low R
DS(on)
, C
iss
and C
rss
along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline
power supply designs.These parts are ideal for boost converters and synchronous rectifiers for consumer,
telecom, industrial power supplies and LED backlighting.
Product Summary
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
100% UIS Tested!
100% R
g
Tested!
350V@150℃
11.5A
<0.42Ω
D
G
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
B
Current
Pulsed Drain Current
Avalanche Current
C
C
H
C
Symbol
V
DS
V
GS
T
C
=25°C
T
C
=100°C
I
D
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
, T
STG
T
L
Maximum
300
±30
11.5
8.3
29
3.8
216
430
5
150
1
-50 to 175
300
Units
V
V
A
A
mJ
mJ
V/ns
W
W/
o
C
°C
°C
Repetitive avalanche energy
Single pulsed avalanche energy
Peak diode recovery dv/dt
T
C
=25°C
Power Dissipation
B
Derate above 25
o
C
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Case-to-sink
Maximum Junction-to-Case
D,F
A
A,G
Symbol
R
θJA
R
θCS
R
θJC
Typical
45
-
0.7
Maximum
55
0.5
1
Units
°C/W
°C/W
°C/W
1/6
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
