AOD476
N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AOD476 uses advanced trench technology and design to provide excellent R
DS(ON)
with low gate
charge. This device is suitable for use in PWM, load switching and general purpose applications.
Features
V
DS
(V) = 20V
I
D
= 25A (V
GS
= 10V)
R
DS(ON)
<21 mΩ (V
GS
= 10V)
R
DS(ON)
<28 mΩ (V
GS
= 4.5V)
R
DS(ON)
<79 mΩ (V
GS
= 2.5V)
D
G
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
Avalanche Current
C
C
Maximum
20
±16
25
20
75
13
25
33.3
16.7
2.5
1.6
-55 to 175
Units
V
V
A
A
mJ
W
W
°C
V
GS
T
C
=25°C
G
T
C
=100°C
I
D
I
DM
I
AR
E
AR
P
D
P
DSM
T
J
, T
STG
Pulsed Drain Current
C
Repetitive avalanche energy L=0.3mH
T
C
=25°C
Power Dissipation
Power Dissipation
B
T
C
=100°C
T
A
=25°C
T
A
=70°C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
A
Maximum Junction-to-Case
B
Symbol
t ≤ 10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
17
40
3.6
Max
25
50
4.5
Units
°C/W
°C/W
°C/W
1/6
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