AOD5N50
500V,5A N-Channel MOSFET
General Description
The AOD5N50 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high
levels of performance and robustness in popular AC-DC applications.By providing low R
DS(on)
, C
iss
and C
rss
along
with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply
designs.
Features
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
600V@150℃
5A
< 1.6Ω
D
G
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Symbol
Parameter
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
B
Pulsed Drain Current
Avalanche Current
C
C
H
C
Maximum
500
±30
5
3.1
17
2.8
118
235
5
104
0.83
-50 to 150
300
Units
V
V
A
A
mJ
mJ
V/ns
W
W/
o
C
°C
°C
T
C
=25°C
T
C
=100°C
I
D
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
, T
STG
T
L
Repetitive avalanche energy
Single plused avalanche energy
Peak diode recovery dv/dt
T
C
=25°C
B
Power Dissipation
Derate above 25
o
C
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
A,G
Maximum Junction-to-Ambient
Maximum Case-to-sink
Maximum Junction-to-Case
D,F
A
Symbol
R
θJA
R
θCS
R
θJC
Typical
43
-
1
Maximum
55
0.5
1.2
Units
°C/W
°C/W
°C/W
1/6
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
