AOD8N25/AOI8N25
250V,8A N-Channel MOSFET
General Description
The AOD8N25 & AOI8N25 have been fabricated using an advanced high voltage MOSFET process that is designed
to deliver high levels of performance and robustness in popular AC-DC applications.
By providing low R
DS(on)
, C
iss
and C
rss
along with guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply designs.These parts are ideal for boost converters and
synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
Features
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
300V@150℃
8A
< 0.56Ω
D
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
B
Pulsed Drain Current
Avalanche Current
C
H
C
Maximum
250
±30
8
5
16
2.1
132
5
78
0.63
-50 to 150
300
Units
V
V
A
A
mJ
V/ns
W
W/
o
C
°
C
°
C
V
GS
T
C
=25°
C
T
C
=100°
C
I
D
I
DM
I
AS
E
AS
dv/dt
P
D
T
J
, T
STG
T
L
Single pulsed avalanche energy
Peak diode recovery dv/dt
T
C
=25°
C
B
Power Dissipation
Derate above 25
o
C
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A,G
Maximum Case-to-sink
A
Maximum Junction-to-Case
D,F
Symbol
R
θJA
R
θCS
R
θJC
Typical
45
-
1.3
Maximum
55
0.5
1.6
Units
°
C/W
°
C/W
°
C/W
1/6
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
