AOD9N40
400V,8A N-Channel MOSFET
General Description
The AOD9N40 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high
levels of performance and robustness in popular AC -DC applications.By providing low R
DS(on)
, C
iss
and C
rss
along
with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply
designs.This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial
power supplies and LED backlighting.
Features
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
500V@150℃
8A
<0.8Ω
D
G
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Symbol
Parameter
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
B
Current
Pulsed Drain Current
Avalanche Current
C
C
H
C
Maximum
400
±30
8
5
22
3.2
150
300
5
125
1
-50 to 150
300
Units
V
V
A
A
mJ
mJ
V/ns
W
W/
o
C
°C
°C
T
C
=25°C
T
C
=100°C
I
D
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
, T
STG
T
L
Repetitive avalanche energy
Single pulsed avalanche energy
Peak diode recovery dv/dt
T
C
=25°C
B
o
Power Dissipation
Derate above 25 C
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Case-to-sink
A
Maximum Junction-to-Case
D,F
A,G
Symbol
R
θJA
R
θCS
R
θJC
Typical
45
-
0.7
Maximum
55
0.5
1
Units
°C/W
°C/W
°C/W
1/6
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
