AOD208/AOI208
30V N-Channel MOSFET
General Description
The AOD208/AOI208 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high
frequency switching performance. Power losses are minimized due to an extremely low combination of
R
DS(ON)
and Crss.In addition, switching behavior is well controlled with a “Schottky style” soft recovery body diode.
Features
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
= 4.5V)
30V
54A
< 4.4mΩ
< 6.5mΩ
D
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
G
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current
C
Avalanche energy L=0.1mH
T
C
=25°
C
Power Dissipation
Power Dissipation
B
C
C
Maximum
30
±20
54
42
200
18
14
38
72
62
31
2.5
1.6
-55 to 175
Units
V
V
A
V
GS
T
C
=25°
C
C
T
C
=100°
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
I
DSM
I
AS
, I
AR
E
AS
, E
AR
P
D
P
DSM
T
J
, T
STG
A
A
mJ
W
W
°
C
T
C
=100°
C
T
A
=25°
C
T
A
=70°
C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
15
41
2
Max
20
50
2.4
Units
°
C/W
°
C/W
°
C/W
1/6
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
