AOD409/AOI409
P-Channel Enhancement Mode Field
Effect Transistor
General Description
The AOD/I409 uses advanced trench technology to provide excellent R
DS(ON)
, low gate charge and low
gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for
high current load applications.
Features
V
DS
(V) = -60V
I
D
= -26A (V
GS
= -10V)
R
DS(ON)
< 40mΩ (V
GS
= -10V) @ -20A
R
DS(ON)
< 55mΩ (V
GS
= -4.5V)
D
G
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
G
Pulsed Drain Current
Avalanche Current
C
C
C
Maximum
-60
±20
-26
-18
-60
-26
33.8
60
30
2.5
1.6
-55 to 175
Units
V
V
A
A
mJ
W
W
°C
T
C
=25°C
T
C
=100°C
I
D
I
DM
I
AR
E
AR
P
D
P
DSM
T
J
, T
STG
T
C
=25°C
Repetitive avalanche energy L=0.1mH
Power Dissipation
Power Dissipation
B
T
C
=100°C
T
A
=25°C
T
A
=70°C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Case
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
16.7
40
1.9
Max
25
50
2.5
Units
°C/W
°C/W
°C/W
1/6
www.freescale.net.cn
SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
