AOD4126/AOI4126
100V N-Channel MOSFET
General Description
The AOD4126&AOI4126 are fabricated with SDMOS
TM
trench technology that combines excellent R
DS(ON)
with
low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is
well suited for PWM, load switching and general purpose applications.
Features
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
= 7V)
100V
43A
< 24mΩ
< 30mΩ
100% UIS Tested
100% R
g
Tested
D
G
S
C
Absolute Maximum Ratings T
A
=25° unless otherwise noted
Symbol
Parameter
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
B
Pulsed Drain Current
Continuous Drain
Current
A
Avalanche Current
C
Avalanche energy L=0.1mH
T
C
=25°
C
Power Dissipation
Power Dissipation
B
C
C
Maximum
100
±25
43
30
100
7.5
6
28
39
100
50
3
1.9
-55 to 175
Units
V
V
A
V
GS
T
C
=25°
C
T
C
=100°
C
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
I
DSM
I
AS
, I
AR
E
AS
, E
AR
P
D
P
DSM
T
J
, T
STG
A
A
mJ
W
W
°
C
T
C
=100°
C
T
A
=25°
C
T
A
=70°
C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
8
35
1
Max
10
42
1.5
Units
°
C/W
°
C/W
°
C/W
1/7
www.freescale.net.cn
SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
