AOD508/AOI508
30V N-Channel AlphaMOS
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
3000
2500
2000
1500
1000
500
VDS=15V
ID=20A
Ciss
8
6
4
Coss
2
Crss
0
0
0
10
20
Qg (nC)
30
40
50
0
5
10
VDS (Volts)
15
20
25
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
400
300
200
100
0
1000.0
100.0
10.0
1.0
10µs
RDS(ON)
10µs
17
5
2
100µs
DC
1ms
10ms
TJ(Max)=150°C
TC=25°C
10
TJ(Max)=150°C
TC=25°C
0.1
0.0
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
0
VDS (Volts)
Pulse Width (s)
18
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
10
1
D=T /T
D=Ton/T
In descending order
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
on
T
=T +P .Z .R
TJJ,,PPKK=TC+PDM.ZθJC.R
θJC
DM θJC θJC
C
40
R
=3°C/W
RθθJJCC=3°C/W
0.1
Single Pulse
Single Pulse
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4/6
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