AOK20S60 参数 Datasheet PDF下载

AOK20S60

600V 20A

α

MOS

TM

Power Transistor

General Description

TM

The AOK20S60 has been fabricated using the advanced

αMOS

high voltage process that is designed to deliver

high levels of performance and robustness in switching applications.By providing low R

DS(on)

, Q

g

and E

OSS

along with

guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supplydesigns.

Features

V

DS

@ T

j,max

I

DM

R

DS(ON),max

Q

g,typ

E

oss

@ 400V

700V

80A

0.199Ω

20nC

4.9µJ

D

G

S

Absolute Maximum Ratings T

A

=25° unless otherwise noted

C

Parameter

Symbol

Drain-Source Voltage

V

DS

Gate-Source Voltage

Continuous Drain

Current

Pulsed Drain Current

Avalanche Current

C

C

G

C

AOK20S60

600

±30

20

14

80

3.4

23

188

266

2.1

100

20

-55 to 150

300

AOK20S60

40

0.5

0.47

Units

V

V

A

A

mJ

mJ

W

W/

o

C

V/ns

°

C

°

C

Units

°

C/W

°

C/W

°

C/W

V

GS

C

T

C

=25°

T

C

=100°

C

I

D

I

DM

I

AR

E

AR

E

AS

o

Repetitive avalanche energy

Single pulsed avalanche energy

T

C

=25°

C

B

Power Dissipation

Derate above 25 C

MOSFET dv/dt ruggedness

H

Peak diode recovery dv/dt

Junction and Storage Temperature Range

Maximum lead temperature for soldering

purpose, 1/8" from case for 5 seconds

J

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient

A,D

Maximum Case-to-sink

Maximum Junction-to-Case

A

P

D

dv/dt

T

J

, T

STG

T

L

Symbol

R

θJA

R

θCS

R

θJC