AOK60N30 参数 Datasheet PDF下载

AOK60N30

300V,60A N-Channel MOSFET

General Description

The AOK60N30 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high

levels of performance and robustness in popular AC-DC applications.By providing low R

DS(on)

, C

iss

and C

rss

along

with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply

designs.

Features

V

DS

I

D

(at V

GS

=10V)

R

DS(ON)

(at V

GS

=10V)

350@150℃

60A

< 0.056Ω

D

G

S

Absolute Maximum Ratings T

A

=25° unless otherwise noted

C

Symbol

Parameter

Drain-Source Voltage

V

DS

Gate-Source Voltage

Continuous Drain

Current

Pulsed Drain Current

Avalanche Current

C

C

G

C

AOK60N30

300

±30

60

40

200

9.5

1353

2707

5

658

5.3

-55 to 150

300

AOK60N30

40

0.5

0.19

Units

V

V

A

A

mJ

mJ

V/ns

W

W/

o

C

°

C

°

C

Units

°

C/W

°

C/W

°

C/W

V

GS

T

C

=25°

C

C

T

C

=100°

I

D

I

DM

I

AR

E

AR

E

AS

dv/dt

P

D

T

J

, T

STG

T

L

Symbol

R

θJA

R

θCS

R

θJC

Repetitive avalanche energy

Single plused avalanche energy

Peak diode recovery dv/dt

T

C

=25°

C

B

Power Dissipation

Derate above 25

o

C

Junction and Storage Temperature Range

Maximum lead temperature for soldering

purpose, 1/8" from case for 5 seconds

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient

A,D

Maximum Case-to-sink

A

Maximum Junction-to-Case

1/5

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