AOL1401 参数 Datasheet PDF下载

AOL1401

P-Channel Enhancement Mode Field

Effect Transistor

General Description

The AOL1401 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate

charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. It is

ESD protected.

Features

V

DS

(V) = -38V

I

D

= -85A

R

DS(ON)

< 8.5mΩ (V

GS

= -20V)

R

DS(ON)

< 10mΩ (V

GS

= -10V)

Ultra

SO-8

TM

Top View

D

D

Bottom tab

connected to

drain

G

S

S

G

Absolute Maximum Ratings T

A

=25°C unless otherwise noted

Parameter

Symbol

V

DS

Drain-Source Voltage

V

GS

Gate-Source Voltage

Continuous Drain

Current

G

Pulsed Drain Current

Continuous Drain

Current

G

Power Dissipation

Power Dissipation

B

C

Maximum

-38

±25

-85

-62

-120

-12

-10

100

50

2.08

1.3

-55 to 175

Units

V

V

T

C

=25°C

T

C

=100°C

T

A

=25°C

T

A

=70°C

T

C

=25°C

T

C

=100°C

T

A

=25°C

A

I

D

I

DM

I

DSM

P

D

P

DSM

T

J

, T

STG

A

W

W

°C

T

A

=70°C

Junction and Storage Temperature Range

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient

A

Maximum Junction-to-Ambient

A

Maximum Junction-to-Case

B

Symbol

t

≤

10s

Steady-State

Steady-State

R

θJA

R

θJC

Typ

21

48

1

Max

25

60

1.5

Units

°C/W

°C/W

°C/W

1/6

www.freescale.net.cn