AOL1426
N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AOL1426 uses advanced trench technology to provide excellent R
DS(ON)
, low gate charge.This device
is suitable for use as a high side switch in SMPS and general purpose applications.
Features
V
DS
(V) = 30V
I
D
= 46A (V
GS
= 10V)
R
DS(ON)
< 10.5mΩ (V
GS
= 10V)
R
DS(ON)
< 13.5mΩ (V
GS
= 4.5V)
Ultra
SO-8
TM
Top View
D
Bottom tab
connected to
drain
G
D
S
G
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
B
Current
Pulsed Drain Current
Continuous Drain
Current
H
Avalanche Current
C
Maximum
30
±12
46
33
120
10
8
30
135
43
21
2
1.2
-55 to 175
Units
V
V
A
V
GS
T
C
=25°C
T
C
=100°C
T
A
=25°C
T
A
=70°C
I
DSM
I
AR
E
AR
P
D
P
DSM
T
J
, T
STG
I
D
I
DM
A
A
mJ
W
W
°C
Repetitive avalanche energy L=0.3mH
C
T
C
=25°C
Power Dissipation
Power Dissipation
B
T
C
=100°C
T
A
=25°C
T
A
=70°C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
A
Maximum Junction-to-Case
C
Symbol
t ≤ 10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
24
53
2.4
Max
30
64
3.5
Units
°C/W
°C/W
°C/W
1/6
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
