AOL1432A
N-Channel SDMOS
TM
POWER Transistor
General Description
The AOL1432A is fabricated with SDMOS
TM
trench technology that combines excellent R
DS(ON)
with low
gate charge. The result is outstanding efficiency with controlled switching behavior. This universal technology
is well suited for PWM, load switching and general purpose applications.
Features
V
DS
(V) = 25V
(V
GS
= 10V)
I
D
= 44A
R
DS(ON)
< 7.5mΩ (V
GS
= 10V)
R
DS(ON)
<14mΩ (V
GS
= 4.5V)
UltraSO-8
TM
Top View
D
Bottom tab
connected to
drain
G
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
G
Pulsed Drain Current
Continuous Drain
A
Current
Avalanche Current
C
C
C
D
S
G
S
Maximum
25
±20
44
31
120
12
10
35
31
30
15
2.1
1.3
-55 to 175
Units
V
V
T
C
=25°C
T
C
=100°C
T
A
=25°C
T
A
=70°C
I
DSM
I
AR
E
AR
P
D
P
DSM
T
J
, T
STG
I
D
I
DM
A
Repetitive avalanche energy L=50μH
T
C
=25°C
Power Dissipation
Power Dissipation
B
mJ
W
W
°C
T
C
=100°C
T
A
=25°C
T
A
=70°C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Case
B
Symbol
A
A
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
14.2
48
3.5
Max
20
60
5
Units
°C/W
°C/W
°C/W
1/7
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