AOL1700
N-Channel Enhancement Mode Field
Effect Transistor
General Description
SRFET
TM
AOL1700 uses advanced trench technology with a monolithically integrated Schottky
diode to provide excellent R
DS(ON)
,and low gate charge. This device is suitable for use as a low side
FET in SMPS, load switching and general purpose applications.
Features
V
DS
(V) = 30V
I
D
=85A (V
GS
= 10V)
R
DS(ON)
< 4.2mΩ (V
GS
= 10V)
R
DS(ON)
< 6.0mΩ (V
GS
= 4.5V)
Ultra
SO-8
TM
Top View
D
Bottom tab
connected to
drain
G
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
B
Continuous Drain
Current
A
Avalanche Current
C
Repetitive avalanche energy L=0.3mH
T
C
=25°C
Power Dissipation
Power Dissipation
B
C
D
SRFET
TM
Soft Recovery
MOSFET:
Integrated Schottky Diode
G
S
S
Maximum
30
±20
85
Units
V
V
A
V
GS
T
C
=25°C
H
T
C
=100°C
T
A
=25°C
T
A
=70°C
I
DSM
I
AR
E
AR
P
D
P
DSM
T
J
, T
STG
I
D
I
DM
81
200
17
13
30
135
100
50
2.1
1.3
-55 to 175
Pulsed Drain Current
C
A
A
mJ
W
W
°C
T
C
=100°C
T
A
=25°C
T
A
=70°C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Case
D
Symbol
t ≤ 10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
19.6
50
1
Max
25
60
1.5
Units
°C/W
°C/W
°C/W
1/6
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
