AON2405
20V P-Channel MOSFET
General Description
The AON2405 combines advanced trench MOSFET technology with a low resistance package to provide
extremely low R
DS(ON)
. This device is ideal for load switch and battery protection applications.
Features
V
DS
I
D
(at V
GS
=-4.5V)
R
DS(ON)
(at V
GS
=-4.5V)
R
DS(ON)
(at V
GS
=-2.5V)
R
DS(ON)
(at V
GS
=-1.8V)
R
DS(ON)
(at V
GS
=-1.5V)
-20V
-8A
< 32mΩ
< 41mΩ
< 56mΩ
< 70mΩ
D
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
G
Pulsed Drain Current
C
C
T
A
=25°
Power Dissipation
A
Maximum
-20
±8
-8
-6
-32
2.8
1.8
-55 to 150
Units
V
V
A
A
W
°
C
V
GS
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
T
A
=70°
C
P
D
T
J
, T
STG
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Symbol
t
≤
10s
Steady-State
R
θJA
Typ
37
66
Max
45
80
Units
°
C/W
°
C/W
1/5
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
