AON2410
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
V
DS
=15V
I
D
=8A
4
Capacitance (pF)
1200
1000
C
iss
800
600
400
C
oss
200
0
0
4
6
8
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
2
10
0
10
15
20
25
V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
30
C
rss
V
GS
(Volts)
3
2
1
0
100.0
10µs
10000
100µs
1000
1ms
10ms
T
A
=25°C
10.0
I
D
(Amps)
R
DS(ON)
limited
1.0
100
0.1
17
5
2
10
T
J(Max)
=150°C
T
A
=25°C
DC
Power (W)
10
0.0
0.01
0.1
1
V
DS
(Volts)
10
100
1
1E-05
0.1
10
0
1000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
0.001
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=80°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
40
0.1
0.01
Single Pulse
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
4/5
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