AON2420
30V N-Channel AlphaMOS
General Description
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Very Low RDS(on) at 4.5V
GS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Features
DS
D
30V
8A
< 11.7mΩ
< 17.5mΩ
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=4.5V)
D
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
G
Pulsed Drain Current
V
DS
Spike
Power Dissipation
A
C
Maximum
30
±20
8
6
32
36
2.8
1.8
-55 to 150
Units
V
V
A
V
W
°
C
V
GS
T
A
=25°
C
T
A
=100°
C
100ns
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
V
SPIKE
P
D
T
J
, T
STG
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Symbol
t
≤
10s
Steady-State
R
θJA
Typ
37
66
Max
45
80
Units
°
C/W
°
C/W
1/5
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