AON2800
20V Dual N-Channel MOSFET
General Description
The AON2800 combines advanced trench MOSFET technology with a low resistance package to provide
extremely low R
DS(ON)
. This device is ideal for load switch and battery protection applications.
Features
V
DS
I
D
(at V
GS
=4.5V)
R
DS(ON)
(at V
GS
=4.5V)
R
DS(ON)
(at V
GS
=2.5V)
20V
4.5A
< 47mΩ
< 65mΩ
DFN 2x2 Package
S1
Pin 1
G1
D2
D1
D2
G1
D1
Pin 1
Top
Bottom
G2
S2
S1
G2
S2
C
Absolute Maximum Ratings T
A
=25° unless otherwise noted
Symbol
Parameter
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
B
C
Maximum
20
±8
4.5
3.8
24
1.5
0.95
-55 to 150
Units
V
V
A
V
GS
C
T
A
=25°
T
A
=70°
C
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
P
D
T
J
, T
STG
W
°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
B
Maximum Junction-to-Ambient
B
Symbol
t
≤
10s
Steady-State
t
≤
10s
Steady-State
R
θJA
R
θJA
Typ
35
65
120
175
Max
45
85
155
235
Units
°
C/W
°
C/W
°
C/W
°
C/W
1/5
www.freescale.net.cn
SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
