AON2801 参数 Datasheet PDF下载

AON2801

General Description

Dual P-Channel Enhancement Mode Field

Effect Transistor

The AON2801/L uses advanced trench technology to provide excellent R

DS(ON)

, low gate charge and

operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM

applications. AON2801 and AON2801L are electrically identical.

-RoHS Compliant

-Halogen Free*

Features

V

DS

(V) = -20V

I

D

= -3A

(V

GS

= -4.5V)

R

DS(ON)

< 120mΩ (V

GS

= -4.5V)

R

DS(ON)

< 160mΩ (V

GS

= -2.5V)

R

DS(ON)

< 200mΩ (V

GS

= -1.8V)

DFN 2x2 Package

S1

G1

D2

D1

D2

G1

D1

Top

G2

S2

S1

Bottom

G2

S2

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain

Current

A

Pulsed Drain Current

Power Dissipation

A

C

Symbol

V

DS

V

GS

T

A

=25°C

T

A

=70°C

T

A

=25°C

T

A

=70°C

I

D

I

DM

P

DSM

T

J

, T

STG

Maximum

-20

±8

-3

-2.3

-15

1.5

0.95

-55 to 150

Units

V

V

A

W

°C

Junction and Storage Temperature Range

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient

A

Maximum Junction-to-Ambient

A

Maximum Junction-to-Ambient

B

Maximum Junction-to-Ambient

B

Symbol

t ≤ 10s

Steady-State

t ≤ 10s

Steady-State

R

θJA

R

θJA

Typ

35

65

120

175

Max

45

85

155

235

Units

°C/W

°C/W

°C/W

°C/W

1/5

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