AON3402
20V N-Channel MOSFET
General Description
The AON3402 uses advanced trench technology to provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 1.8V while retaining a 12V V
GS(MAX)
rating.This device is suitable
for use as load switch and general purpose FET application.
Product Summary
V
DS
(V) = 20V
I
D
= 12.6A (V
GS
= 4.5V)
R
DS(ON)
< 13mΩ (V
GS
= 4.5V)
R
DS(ON)
< 17mΩ (V
GS
= 2.5V)
R
DS(ON)
< 26mΩ (V
GS
= 1.8V)
D
Top View
1
2
3
4
8
7
6
5
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Symbol
Parameter
V
DS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
A
Current
Pulsed Drain Current
B
T
A
=25°
C
Power Dissipation
A
Maximum
20
±12
12.6
10
40
3.1
2
-55 to 150
Units
V
V
A
V
GS
C
T
A
=25°
T
A
=70°
C
I
D
I
DM
T
A
=70°
C
P
D
T
J
, T
STG
W
°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
30
65
20
Max
40
80
25
Units
°
C/W
°
C/W
°
C/W
1/4
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