AON3814
20V N-Channel MOSFET
General Description
The AON3814 uses advanced trench technology to provide excellent R
DS(ON)
, low gate charge and operation
with gate voltages as low as 1.8V while retaining a 12V V
GS(MAX)
rating. It is ESD protected. This device is suitable
for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration.
Features
V
DS
I
D
(at V
GS
=4.5V)
R
DS(ON)
(at V
GS
= 4.5V)
R
DS(ON)
(at V
GS
= 4V)
R
DS(ON)
(at V
GS
= 3.1V)
R
DS(ON)
(at V
GS
= 2.5V)
ESD Protected
D1
D2
20V
6A
< 17mΩ
< 18.5mΩ
< 23mΩ
< 24mΩ
Top View
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2
G1
D1
D1
S1
G2
S2
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
F
Pulsed Drain Current
Power Dissipation
F
B
Maximum
20
±12
6
5.3
40
2.5
1.6
-55 to 150
Units
V
V
A
V
GS
T
C
=25°
C
T
C
=70°
C
T
C
=25°
C
T
C
=70°
C
I
D
I
DM
P
D
T
J
, T
STG
W
°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
40
75
30
Max
50
95
40
Units
°
C/W
°
C/W
°
C/W
1/5
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
