AON4421
P-Channel Enhancement Mode Field
Effect Transistor
General Description
The AON4421 uses advanced trench technology to provide excellent R
DS(ON)
with low gate charge. This
device is suitable for use as a load switch.
Features
V
DS
I
D
(at V
GS
=-10V)
R
DS(ON)
(at V
GS
=-10V)
R
DS(ON)
(at V
GS
=-4.5V)
-30V
-8A
< 26mΩ
< 34mΩ
DFN 3x2
Top View
Pin 1
Bottom View
D
D
D
G
D
D
D
S
G
D
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Symbol
Parameter
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
B
Maximum
-30
±20
-8
-6
-60
2.5
1.6
-55 to 150
Units
V
V
A
T
A
=25°C
T
A
=70°C
C
I
D
I
DM
P
D
T
J
, T
STG
T
A
=25°C
T
A
=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Lead
W
°C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
42
74
25
Max
50
90
30
Units
°C/W
°C/W
°C/W
1/5
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
