AON4805L
Dual P-Channel Enhancement Mode
Field Effect Transistor
General Description
The AON4805L uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltage as low as 1.8V. This device is suitable for use as a load switch or in PWM
applications.
-RoHS Compliant
-Halogen Free
Features
V
DS
(V) = -20V
I
D
= -4.5A
(V
GS
= -4.5V)
R
DS(ON)
< 65mΩ (V
GS
= -4.5V)
R
DS(ON)
< 85mΩ (V
GS
= -2.5V)
R
DS(ON)
< 115mΩ (V
GS
= -1.8V)
DFN 3x2
Top View
Pin 1
Bottom View
S1
G1
S2
G2
1
2
3
4
8
7
6
5
D1
D1
D2
D2
D1
D2
G1
S1
G2
S2
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
B
C
MOSFET
-20
±8
-4.5
-3.5
-25
2
1.3
-55 to 150
Units
V
V
A
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
W
°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
Symbol
A
AD
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
50
84
28
Max
60
100
34
Units
°C/W
°C/W
°C/W
1/5
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
