AON5802B
Common-Drain Dual N-Channel Enhancement
Mode Field Effect Transistor
General Description
The AON5802B/L uses advanced trench technology to provide excellent R
DS(ON)
, low gate charge and operation with
gate voltages as low as 2.5V while retaining a 12V V
GS(MAX)
rating. This device is suitable for use as a uni-directional or bi-
directional load switch, facilitated by its common-drain configuration.
AON5802B and AON5802BL are electrically identical.
-RoHs
Compliant
-AON5802BL is Halogen Free
Features
V
DS
(V) = 30V
I
D
= 7.2A (V
GS
= 4.5V)
R
DS(ON)
< 19 mΩ (V
GS
= 4.5V)
R
DS(ON)
< 20 mΩ (V
GS
= 4.0V)
R
DS(ON)
< 23 mΩ (V
GS
= 3.1V)
R
DS(ON)
< 30 mΩ (V
GS
= 2.5V)
DFN 2X5
S2
S1
G1
S1
D1/D2
G1
S1
S2
S2
G1
S1
S1
S2
Rg
Rg
S2
D1
1
D2
1
G2
G2
Top View
G2
Bottom View
Symbol
V
DS
V
GS
Maximum
30
±12
7.2
5.6
55
1.6
1.0
-55 to 150
W
°
C
A
Units
V
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
A
B
C
T
A
=25°
T
A
=70°
C
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
P
DSM
T
J
, T
STG
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
30
61
4.5
Max
40
75
6
Units
°
C/W
°
C/W
°
C/W
1/5
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
