AON6210 参数 Datasheet PDF下载

AON6210

30V N-Channel MOSFET

General Description

The AON6210 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high

frequency switching performance. Conduction and switching losses are minimized due to an extremely low

combination of R

DS(ON)

and Crss.In addition,switching behavior is well controlled with a "Schottky style" soft

recovery body diode.

Features

V

DS

I

D

(at V

GS

=10V)

R

DS(ON)

(at V

GS

=10V)

R

DS(ON)

(at V

GS

= 4.5V)

30V

85A

< 1.8mΩ

< 2.5mΩ

D

Top View

1

2

3

4

8

7

6

5

G

S

Absolute Maximum Ratings T

A

=25°C unless otherwise noted

Parameter

Symbol

V

DS

Drain-Source Voltage

V

GS

Gate-Source Voltage

Continuous Drain

Current

G

Pulsed Drain Current

Continuous Drain

Current

Avalanche Current

C

C

C

Maximum

30

±20

85

67

350

28

22

85

361

83

33

2.3

1.5

-55 to 150

Units

V

V

A

T

C

=25°C

T

C

=100°C

T

A

=25°C

T

A

=70°C

I

D

I

DM

I

DSM

I

AS

, I

AR

E

AS

, E

AR

P

D

P

DSM

T

J

, T

STG

A

A

mJ

W

W

°C

Avalanche energy L=0.1mH

Power Dissipation

Power Dissipation

B

T

C

=25°C

T

C

=100°C

T

A

=25°C

A

T

A

=70°C

Junction and Storage Temperature Range

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient

A

AD

Maximum Junction-to-Ambient

Maximum Junction-to-Case

Symbol

t

≤

10s

Steady-State

Steady-State

R

θJA

R

θJC

Typ

14

40

1

Max

17

55

1.5

Units

°C/W

°C/W

°C/W

1/6

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