AON6234
40V N-Channel MOSFET
General Description
The AON6234 uses trench MOSFET technology that is uniquely optimized to provide the most efficient hi gh
frequency switching performance.Power losses are minimized due to an extremely low combination of
R
DS(ON)
and Crss.In addition,switching behavior is well controlled with a "Schottky style" soft recovery bo dy
diode.
Product Summary
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
= 4.5V)
40V
85A
< 3.4mΩ
< 5.0mΩ
100% UIS Tested
100% R
g
Tested
Top View
1
2
3
4
D
8
7
6
5
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
G
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current
C
Avalanche energy L=0.1mH
Power Dissipation
Power Dissipation
B
C
C
Maximum
40
±20
85
67
220
20
15
50
125
83
33
2.3
1.4
-55 to 150
Units
V
V
A
T
C
=25°
C
C
T
C
=100°
C
T
A
=25°
T
A
=70°
C
I
D
I
DM
I
DSM
I
AS
, I
AR
E
AS
, E
AR
P
D
P
DSM
T
J
, T
STG
A
A
mJ
W
W
°
C
T
C
=25°
C
T
C
=100°
C
T
A
=25°
C
A
T
A
=70°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
14
40
1.1
Max
17
55
1.5
Units
°
C/W
°
C/W
°
C/W
1/6
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