AON6236
40V N-Channel MOSFET
General Descrion
The AON6236 uses trench MOSFET technology that is uniquely optimized to provide the most efficient hi gh
frequency switching performance.Power losses are minimized due to an extremely low combination of
R
DS(ON)
and Crss.In addition,switching behavior is well controlled with a "Schottky style" soft recovery bo dy
diode.
Product Summary
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
= 4.5V)
40V
30A
< 7mΩ
< 10.5mΩ
100% UIS Tested
100% R
g
Tested
Top View
1
2
3
4
D
8
7
6
5
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
G
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current
C
Avalanche energy L=0.1mH
C
T
C
=25°
Power Dissipation
Power Dissipation
B
C
C
Maximum
40
±20
30
24
120
19
15
33
54
39
15.5
4.2
2.7
-55 to 150
Units
V
V
A
V
GS
T
C
=25°
C
T
C
=100°
C
C
T
A
=25°
T
A
=70°
C
I
D
I
DM
I
DSM
I
AS
E
AS
P
D
P
DSM
T
J
, T
STG
A
A
mJ
W
W
°
C
T
C
=100°
C
T
A
=25°
C
T
A
=70°
C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
24
53
2.6
Max
30
64
3.2
Units
°
C/W
°
C/W
°
C/W
1/6
www.freescale.net.cn
SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
