AON6404
30V N-Channel MOSFET
General Description
The AON6404 combines advanced trench MOSFET technology with a low resistance package to provide
extremely low R
DS(ON).
This device is ideal for load switch and battery protection applications.
Features
V
DS
(V) = 30V
I
D
= 85A (V
GS
= 10V)
R
DS(ON)
< 2.2mΩ (V
GS
= 10V)
R
DS(ON)
< 3.8mΩ (V
GS
= 4.5V)
D
Top View
1
2
3
4
8
7
6
5
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
B,G
Pulsed Drain Current
Continuous Drain
Current
A
Avalanche Current
Single avalanche energy L=0.1mH
T
C
=25°
C
Power Dissipation
Power Dissipation
B
Maximum
30
±20
85
67
160
25
20
85
361
83
33
2.1
1.3
-55 to 150
Units
V
V
V
GS
T
C
=25°
C
T
C
=100°
C
C
T
A
=25°
T
A
=70°
C
I
DSM
I
AS
E
AS
P
D
P
DSM
T
J
, T
STG
I
D
I
DM
A
mJ
W
W
°
C
T
C
=100°
C
T
A
=25°
C
T
A
=70°
C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
A
Maximum Junction-to-Ambient
Maximum Junction-to-Case
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
15
45
1.1
Max
20
60
1.5
Units
°
C/W
°
C/W
°
C/W
1/6
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