AON6408
30V N-Channel MOSFET
General Description
The AON6408 combines advanced trench MOSFET technology with a low resistance package to provide
extremely low R
DS(ON)
. This device is for PWM applications.
Features
V
DS
(V) = 30V
I
D
= 25A
R
DS(ON)
< 6.5mΩ
R
DS(ON)
< 9.5mΩ
(V
GS
= 10V)
(V
GS
= 10V)
(V
GS
= 4.5V)
Top View
1
2
3
4
D
8
7
6
5
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Symbol
Parameter
V
DS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
G
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current
C
Repetitive avalanche energy L=0.1mH
T
C
=25°
C
Power Dissipation
Power Dissipation
B
C
C
Maximum
30
±20
25
20
130
14.5
11.5
32
51
31
12.5
2.4
1.5
-55 to 150
Units
V
V
A
V
GS
T
C
=25°
C
T
C
=100°
C
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
I
DSM
I
AR
E
AR
P
D
P
DSM
T
J
, T
STG
A
A
mJ
W
W
°
C
T
C
=100°
C
T
A
=25°
C
T
A
=70°
C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
17
44
3.4
Max
21
53
4
Units
°
C/W
°
C/W
°
C/W
1/6
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
