AON6435
30V P-Channel MOSFET
General Description
The AON6435 combines advanced trench MOSFET technology with a low resistance package to provide
extremely low R
DS(ON)
. This device is ideal for load switch and battery protection applications.
Features
V
DS
I
D
(at V
GS
= -10V)
R
DS(ON)
(at V
GS
= -10V)
R
DS(ON)
(at V
GS
=-5V)
-30V
-34A
< 17mΩ
< 34mΩ
Top View
1
2
3
4
D
8
7
6
5
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current
C
Avalanche energy L=0.1mH
T
C
=25°
C
Power Dissipation
Power Dissipation
B
C
C
Maximum
-30
±25
-34
-21.5
-95
-12
-10
24
29
31
12.5
4.1
2.6
-55 to 150
Units
V
V
A
V
GS
T
C
=25°
C
T
C
=100°
C
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
I
DSM
I
AS
E
AS
P
D
P
DSM
T
J
, T
STG
A
A
mJ
W
W
°
C
T
C
=100°
C
T
A
=25°
C
T
A
=70°
C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
24
53
3.4
Max
30
64
4
Units
°
C/W
°
C/W
°
C/W
1/7
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
