AON6442 参数 Datasheet PDF下载

AON6442

40V N-Channel MOSFET

General Description

The AON6442 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high

frequency switching performance.Power losses are minimized due to an extremely low combination of R

DS(ON)

and C

rss

.In addition,switching behavior is well controlled with a "Schottky style" soft recovery body diode.

Product Summary

V

DS

I

D

(at V

GS

=10V)

R

DS(ON)

(at V

GS

=10V)

R

DS(ON)

(at V

GS

= 4.5V)

40V

32A

< 4.8mΩ

< 7mΩ

D

100% UIS Tested

100% R

g

Tested

Top View

1

2

3

4

8

7

6

5

G

S

Absolute Maximum Ratings T

A

=25°C unless otherwise noted

Parameter

Symbol

V

DS

Drain-Source Voltage

V

GS

Gate-Source Voltage

Continuous Drain

Current

Pulsed Drain Current

Continuous Drain

Current

Avalanche Current

C

Avalanche energy L=0.1mH

Power Dissipation

Power Dissipation

B

C

C

Maximum

40

±20

65

42

168

22

18

40

80

35.7

14

4.2

2.7

-55 to 150

Units

V

V

A

T

C

=25°C

T

C

=100°C

T

A

=25°C

T

A

=70°C

I

D

I

DM

I

DSM

I

AS

, I

AR

E

AS

, E

AR

P

D

P

DSM

T

J

, T

STG

A

A

mJ

W

W

°C

T

C

=25°C

T

C

=100°C

T

A

=25°C

A

T

A

=70°C

Junction and Storage Temperature Range

Thermal Characteristics

Parameter

A

Maximum Junction-to-Ambient

AD

Maximum Junction-to-Ambient

Maximum Junction-to-Case

Symbol

t

≤

10s

Steady-State

Steady-State

R

θJA

R

θJC

Typ

25

55

2.6

Max

30

65

3.5

Units

°C/W

°C/W

°C/W

1/6

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