AON6458
250V,14A N-Channel MOSFET
General Description
The AON6458 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of
performance and robustness in popular AC-DC applications.By providing low R
DS(on)
, C
iss
and C
rss
along with
guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply
designs.This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial
power supplies and LED backlighting.
Features
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
300V@150℃
14A
< 0.17Ω
g
Top View
1
2
3
4
8
7
6
5
D
G
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
B
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current
C
Repetitive avalanche energy
C
H
C
Maximum
250
±30
14
8.8
42
2.2
1.7
4.5
304
608
5
83
33
2
1.25
-50 to 150
Units
V
V
A
V
GS
T
C
=25°C
T
C
=100°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
I
DSM
I
AR
E
AR
E
AS
dv/dt
P
D
P
DSM
T
J
, T
STG
A
A
mJ
mJ
V/ns
W
W
W
°C
Single pulsed avalanche energy
Peak diode recovery dv/dt
T
C
=25°C
Power Dissipation
B
Power Dissipation
A
T
C
=100°C
T
A
=25°C
T
A
=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
Symbol
t ≤ 10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
24
53
1
Max
30
64
1.5
Units
°C/W
°C/W
°C/W
1/6
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
