AON7240
40V N-Channel MOSFET
General Description
The AON7240 uses trench MOSFET technology that is uniquely optimized to provide the most efficient hi gh
frequency switching performance.Power losses are minimized due to an extremely low combination of
R
DS(ON)
and C
rss
.In addition,switching behavior is well controlled with a "Schottky style" soft recovery bo dy diode.
Product Summary
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
= 4.5V)
40V
40A
< 5.1mΩ
< 7mΩ
100% UIS Tested
100% R
g
Tested
Top View
1
2
3
4
8
7
6
5
D
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
G
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current
C
Avalanche energy L=0.1mH
T
C
=25°
C
Power Dissipation
Power Dissipation
B
C
C
Maximum
40
±20
40
31
144
19
15
40
80
36.7
14
3.1
2
-55 to 150
Units
V
V
A
V
GS
C
T
C
=25°
T
C
=100°
C
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
I
DSM
I
AS
, I
AR
E
AS
, E
AR
P
D
P
DSM
T
J
, T
STG
A
A
mJ
W
W
°
C
C
T
C
=100°
T
A
=25°
C
C
T
A
=70°
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
30
60
2.8
Max
40
75
3.4
Units
°
C/W
°
C/W
°
C/W
1/6
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