AON7401
30V P-Channel MOSFET
General Description
The AON7401 uses advanced trench technology to
provide excellent R
DS(ON)
, and ultra-low low gate charge
with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.
Features
V
DS
I
D
(at V
GS
=-10V)
R
DS(ON)
(at V
GS
=-10V)
R
DS(ON)
(at V
GS
=-6V)
-30V
-35A
< 14mΩ
< 17mΩ
D
Top View
1
2
3
4
8
7
6
5
G
S
C
Absolute Maximum Ratings T
A
=25° unless otherwise noted
Symbol
Parameter
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Continuous Drain
Current
Power Dissipation
Power Dissipation
B
C
Maximum
-30
±25
-35
-23
-80
-12
-9.7
29
12
3.1
2
-55 to 150
Units
V
V
A
V
GS
T
C
=25°
C
C
T
C
=100°
T
A
=25°
C
C
T
A
=70°
T
C
=25°
C
T
C
=100°
C
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
I
DSM
P
D
P
DSM
T
J
, T
STG
A
W
W
°
C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Lead
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
30
60
3.5
Max
40
75
4.2
Units
°
C/W
°
C/W
°
C/W
1/5
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
