AON7611
30V Complementary MOSFET
General Description
The AON7611 uses advanced trench technology to provide excellent R
DS(ON)
and low gate charge. The
complementary MOSFETs may be used in inverter and other applications.
Features
N-channel
V
DS
(V) = 30V
I
D
= 9.0A
R
DS(ON)
< 50mΩ
R
DS(ON)
< 70mΩ
100% UIS Tested
100% R
g
Tested
D2
D1
P-channel
V
DS
(V) = -30V
I
D
= -18.5A
R
DS(ON)
< 38mΩ
R
DS(ON)
< 62mΩ
(V
GS
= ±10V)
(V
GS
= ±10V)
(V
GS
= ±4.5V)
Top View
S2
G2
S1
G1
D2
D2
D1
D1
G2
S2
G1
S1
N-channel
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Symbol
Parameter
Max N-channel
Drain-Source Voltage
V
DS
30
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Continuous Drain
Current
A
Avalanche Current
C
C
P-channel
Units
V
V
Max P-channel
-30
±20
-18.5
-11.5
-35
-5
-4
-17
14
20.8
8.3
1.5
0.9
-55 to 150
V
GS
T
A
=25°
C
T
A
=100°
C
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
I
DSM
I
AR
E
AR
P
D
P
DSM
T
J
, T
STG
±20
9
5.5
20
4
3
7
2
7
2.8
1.5
0.9
-55 to 150
A
A
mJ
W
W
°
C
Repetitive avalanche energy L=0.1mH
C
C
T
A
=25°
Power Dissipation
Power Dissipation
B
T
A
=100°
C
T
A
=25°
C
C
T
A
=70°
A
Junction and Storage Temperature Range
Thermal Characteristics: N-channel
Parameter
t
≤
10s
Maximum Junction-to-Ambient
A
AD
Steady-State
Maximum Junction-to-Ambient
Steady-State
Maximum Junction-to-Case
B
Thermal Characteristics: P-channel
Parameter
t
≤
10s
Maximum Junction-to-Ambient
A
AD
Steady-State
Maximum Junction-to-Ambient
Symbol
R
θJA
R
θJC
Symbol
R
θJA
R
θJC
Typ
40
70
15
Typ
40
70
5
Max
50
85
18
Max
50
85
6
Units
°
C/W
°
C/W
°
C/W
Units
°
C/W
°
C/W
°
C/W
Maximum Junction-to-Case
B
Steady-State
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