AON7702B
30V N-Channel MOSFET
General Description
SRFET
TM
AON7702B uses advanced trench technology with a monolithically integrated Schottky diode to provide
excellent R
DS(ON)
,and low gate charge. This device is suitable for use as a low side FET in SMPS, load
switching and general purpose applications.
Features
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=4.5V)
30V
20A
< 9.5mΩ
< 14.5mΩ
D
Top View
1
2
3
4
8
7
6
5
SRFET
TM
Soft Recovery
MOSFET:
Integrated Schottky Diode
G
S
C
Absolute Maximum Ratings T
A
=25° unless otherwise noted
Symbol
Parameter
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
G
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current
C
Avalanche energy L=0.1mH
T
C
=25°
C
Power Dissipation
Power Dissipation
B
C
C
Maximum
30
±20
20
15.5
80
13.5
11
19
18
23
9
3.1
2
-55 to 150
Units
V
V
A
V
GS
T
C
=25°
C
T
C
=100°
C
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
I
DSM
I
AS
E
AS
P
D
P
DSM
T
J
, T
STG
A
A
mJ
W
W
°
C
T
C
=100°
C
T
A
=25°
C
T
A
=70°
C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
30
60
4.5
Max
40
75
5.4
Units
°
C/W
°
C/W
°
C/W
1/7
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