AON7784
30V N-Channel MOSFET
SRFET
General Description
TM
SRFET
TM
AON7784 uses advanced trench technology with a monolithically integrated Schottky diode to provide
excellent R
DS(ON)
and low gate charge. This device is suitable for use as a low side FET in SMPS, load
switching and general purpose applications.
Product Summary
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
= 4.5V)
30V
50A
< 3.5mΩ
< 4mΩ
100% UIS Tested
100% R
g
Tested
Top View
1
2
3
4
8
7
6
5
D
SRFET
TM
Soft Recovery
MOSFET:
Integrated Schottky Diode
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
G
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current
C
Avalanche energy L=0.1mH
T
C
=25°
C
Power Dissipation
Power Dissipation
B
C
C
Maximum
30
±12
50
39
265
31
25
34
58
83
33
6.2
4
-55 to 150
Units
V
V
A
V
GS
T
C
=25°
C
T
C
=100°
C
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
I
DSM
I
AS
, I
AR
E
AS
, E
AR
P
D
P
DSM
T
J
, T
STG
A
A
mJ
W
W
°
C
T
C
=100°
C
T
A
=25°
C
T
A
=70°
C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
16
45
1.1
Max
20
55
1.5
Units
°
C/W
°
C/W
°
C/W
1/7
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