AON7820
20V Dual N-Channel MOSFET
General Description
The AON7820 combines advanced trench MOSFET technology with a low resistance package to provide
extremely low R
SS(ON)
. This device is ideal for load switch and battery protection applications.
Features
V
DS
I
S
(at V
GS
=4.5V)
R
SS(ON)
(at V
GS
=4.5V)
R
SS(ON)
(at V
GS
=3.5V)
R
SS(ON)
(at V
GS
=2.5V)
20V
35A
< 16mΩ
< 17mΩ
< 20mΩ
D
D
Top View
S1
G1
S2
G2
D1
D1
D2
D2
S
S
G
G
C
Absolute Maximum Ratings T
A
=25° unless otherwise noted
Symbol
Parameter
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Continuous Drain
Current
Power Dissipation
Power Dissipation
B
C
Maximum
20
±12
35
22
80
11
9
31
12.5
3.1
2
-55 to 150
Units
V
V
A
V
GS
T
C
=25°
C
T
C
=100°
C
T
A
=25°
C
T
A
=70°
C
T
C
=25°
C
T
C
=100°
C
T
A
=25°
C
T
A
=70°
C
I
S
I
SM
I
SSM
P
D
P
DSM
T
J
, T
STG
A
W
W
°
C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
30
60
3.2
Max
40
75
4
Units
°
C/W
°
C/W
°
C/W
1/6
www.freescale.net.cn