AON7932
30V Dual Asymmetric
N-Channel MOSFET
General Description
The AON7932 is designed to provide a high efficiency synchronous buck power stage with optimal layout and
board space utilization. It includes two specialized MOSFETs in a dual Power DFN3x3A package. The Q1
"High Side" MOSFET is designed to minimize switching losses. The Q2 "Low Side" MOSFET use advance trench
technology with a monolithically integrated Schotty to provide excellent R
DS(ON)
and low gate charge. The
AON7932 is well suited for use in compact DC/DC converter applications.
Features
Q1
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
= 4.5V)
100% UIS Tested
100% Rg Tested
30V
26A
<20mΩ
<30mΩ
Q2
30V
35A
<12mΩ
<15mΩ
Top View
Bottom View
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current
C
Avalanche Energy L=0.1mH
Power Dissipation
Power Dissipation
B
C
C
Max Q1
30
±20
26
16
70
6.6
5.3
18
16
23
9
1.4
0.9
-55 to 150
Max Q2
±12
35
22
110
8.1
6.5
17
14
25
10
1.4
0.9
Units
V
V
A
V
GS
T
C
=25°
C
T
C
=100°
C
C
T
A
=25°
T
A
=70°
C
I
D
I
DM
I
DSM
I
AS
, I
AR
E
AS
, E
AR
P
D
P
DSM
T
J
, T
STG
T
C
=25°
C
T
C
=100°
C
T
A
=25°
C
T
A
=70°
C
A
A
mJ
W
W
°
C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ Q1
40
70
4.5
Max Q1
50
90
5.4
Typ Q2
40
70
4.2
Max Q2
50
90
5
Units
°
C/W
°
C/W
°
C/W
1 / 11
www.freescale.net.cn
SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
