AOT12N30/AOTF12N30
300V,11.5A N-Channel MOSFET
General Description
The AOT12N30/AOTF12N30 is fabricated using an advanced high voltage MOSFET process that is designed
to deliver high levels of performance and robustness in popular AC-DC applications.By providing low R
DS(on)
, C
iss
and C
rss
along with guaranteed avalanche capability this parts can be adopted quickly into new and existing offline
power supply designs.These parts are ideal for boost converters and synchronous rectifiers for consumer,
telecom, industrial power supplies and LED backlighting.
Features
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
350V@150℃
11.5A
< 0.42Ω
D
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
AOT12N30
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
C
G
C
AOTF12N30
300
±30
11.5*
7.3*
29
3.8
430
5
Units
V
V
A
A
mJ
V/ns
W
W/
o
C
°
C
°
C
V
GS
C
T
C
=25°
T
C
=100°
C
I
D
I
DM
I
AS
E
AS
dv/dt
P
D
T
J
, T
STG
T
L
Symbol
R
θJA
R
θCS
R
θJC
AOT12N30
65
0.5
0.95
132
1
11.5
7.3
Single pulsed avalanche energy
Peak diode recovery dv/dt
T
C
=25°
C
B
Power Dissipation
Derate above 25
o
C
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A,D
Maximum Case-to-sink
A
Maximum Junction-to-Case
36
0.3
-55 to 150
300
AOTF12N30
65
--
3.5
Units
°
C/W
°
C/W
°
C/W
1/6
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
