AOT1606L/AOB1606L
60V N-Channel Rugged Planar MOSFET
General Description
The AOT1606L/AOB1606L uses a robust technology that is designed to provide efficient and reliable power
conversion even in the most demanding applications, including motor control. With low R
DS(ON)
and excellent
thermal capability this device is appropriate for high current switching and can endure adverse operating
conditions.
Features
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
60V
178A
< 6.3mΩ
TO220
TO-263
D
2
PAK
D
D
D
G
S
D
G
G
S
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
G
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current
C
Avalanche energy L=0.1mH
T
C
=25°
C
Power Dissipation
Power Dissipation
B
C
C
Maximum
60
±20
178
126
310
12
10
125
781
417
208
2.1
1.3
-55 to 175
Units
V
V
A
V
GS
T
C
=25°
C
T
C
=100°
C
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
I
DSM
I
AS
, I
AR
E
AS
, E
AR
P
D
P
DSM
T
J
, T
STG
A
A
mJ
W
W
°
C
T
C
=100°
C
T
A
=25°
C
T
A
=70°
C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
12
48
0.3
Max
15
60
0.36
Units
°
C/W
°
C/W
°
C/W
1/6
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