AOT20N25
250V,20A N-Channel MOSFET
General Description
The AOT20N25 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high
levels of performance and robustness in popular AC-DC applications.By providing low R
DS(on)
, C
iss
and C
rss
along
with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply
designs.This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial
power supplies and LED backlighting.
Features
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
300V@150℃
20A
< 0.17Ω
D
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Symbol
Parameter
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
C
G
C
AOT20N25
250
±30
20
14
51
4.5
608
5
208
1.7
-55 to 150
300
AOT20N25
65
0.5
0.6
Units
V
V
A
A
mJ
V/ns
W
W/
o
C
°
C
°
C
Units
°
C/W
°
C/W
°
C/W
V
GS
C
T
C
=25°
C
T
C
=100°
I
D
I
DM
I
AS
E
AS
dv/dt
P
D
T
J
, T
STG
T
L
Symbol
R
θJA
R
θCS
R
θJC
Single pulsed avalanche energy
Peak diode recovery dv/dt
T
C
=25°
C
B
Power Dissipation
Derate above 25
o
C
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A,D
Maximum Case-to-sink
A
Maximum Junction-to-Case
1/5
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
