AOT25S65/AOB25S65/AOTF25S65
600V 20A
α
MOS
TM
Power Transistor
General Description
The AOT25S65 & AOB25S65 & AOTF25S65 have been fabricated using the advanced
αMOS
TM
high voltage process that is designed to deliver high levels of
performance and robustness in switching applications. By providing low R
DS(on)
, Q
g
and E
OSS
along with guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply designs.
Features
V
DS
@ T
j,max
I
DM
R
DS(ON),max
Q
g,typ
E
oss
@ 400V
750V
104A
0.19Ω
26.4nC
5.8µC
D
G
S
C
Absolute Maximum Ratings T
A
=25° unless otherwise noted
AOT25S65/AOB25S65
Symbol
Parameter
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
C
Avalanche Current
C
Repetitive avalanche energy
C
G
AOTF25S65
650
±30
25*
16*
104
7
96
750
AOTF25S65L
Units
V
V
V
GS
C
T
C
=25°
T
C
=100°
C
I
D
I
DM
I
AR
E
AR
E
AS
o
25
16
25*
16*
A
A
mJ
mJ
40
0.3
W
o
W/ C
Single pulsed avalanche energy
T
C
=25°
C
B
Power Dissipation
Derate above 25 C
MOSFET dv/dt ruggedness
H
Peak diode recovery dv/dt
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
J
Thermal Characteristics
Parameter
A,D
P
D
dv/dt
T
J
, T
STG
T
L
Symbol
R
θJA
357
2.9
50
0.4
100
20
-55 to 150
300
V/ns
°
C
°
C
AOTF25S65L
65
--
3.1
Units
°
C/W
°
C/W
°
C/W
AOT25S65/AOB25S65
65
0.5
0.35
AOTF25S65
65
--
2.5
Maximum Junction-to-Ambient
A
R
θCS
Maximum Case-to-sink
Maximum Junction-to-Case
R
θJC
* Drain current limited by maximum junction temperature.
1/7
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
