AOT2606L/AOB2606L/AOTF2606L
60V N-Channel MOSFET
General Description
The AOT2606L & AOB2606L & AOTF2606L uses Trench MOSFET technology that is uniquely optimized to provide
the most efficient high frequency switching performance. Both conduction and switching power losses are
minimized due to an extremely low combination of R
DS(ON)
, Ciss and Coss. This device is ideal for boost converters
and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
Features
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
60V
72A
< 6.5mΩ (< 6.2mΩ∗)
D
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
AOT2606L/AOB2606L
Drain-Source Voltage
V
DS
60
Gate-Source Voltage
Continuous Drain
Current
G
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current
C
Avalanche energy L=0.1mH
Power Dissipation
Power Dissipation
B
C
C
AOTF2606L
Units
V
V
V
GS
T
C
=25°
C
T
C
=100°
C
T
A
=25°
C
C
T
A
=70°
I
D
I
DM
I
DSM
I
AS
E
AS
P
D
P
DSM
T
J
, T
STG
115
57.5
T
C
=25°
C
T
C
=100°
C
T
A
=25°
C
T
A
=70°
C
72
56
±20
54
38
260
13
10
60
180
36.5
18
2.1
1.3
-55 to 175
A
A
A
mJ
W
W
°
C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
* Surface mount package TO263
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
AOT2606L/AOB2606L
15
60
1.3
AOTF2606L
15
60
4.1
Units
°
C/W
°
C/W
°
C/W
1/7
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
