AOT29S50/AOB29S50/AOTF29S50
500V 29A
α
MOS
TM
Power Transistor
General Description
The AOT29S50 & AOB29S50 & AOTF29S50 have been fabricated using the advanced
αMOS
TM
high voltage process that is designed to deliver high levels of
performance and robustness in switching applications. By providing low R
DS(on)
, Q
g
and E
OSS
along with guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply designs.
Features
V
DS
@ T
j,max
I
DM
R
DS(ON),max
Q
g,typ
E
oss
@ 400V
600V
120A
0.15Ω
26.6nC
6.3µJ
D
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
AOT29S50/AOB29S50
Symbol
V
DS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
C
C
C
AOTF29S50
500
±30
29*
18*
120
7.5
110
608
AOTF29S50L
Units
V
V
V
GS
C
T
C
=25°
C
T
C
=100°
I
D
I
DM
I
AR
E
AR
E
AS
o
29
18
29*
18*
A
A
mJ
mJ
Repetitive avalanche energy
Single pulsed avalanche energy
G
T
C
=25°
C
Power Dissipation
Derate above 25 C
MOSFET dv/dt ruggedness
H
Peak diode recovery dv/dt
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
J
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A,D
A
B
P
D
dv/dt
T
J
, T
STG
T
L
Symbol
R
θJA
R
θCS
357
2.9
50
0.4
100
20
-55 to 150
300
37.9
0.3
W
W/
o
C
V/ns
°
C
°
C
AOT29S50/AOB29S50
65
0.5
0.35
AOTF29S50
65
--
2.5
AOTF29S50L
65
--
3.3
Units
°
C/W
°
C/W
°
C/W
Maximum Case-to-sink
Maximum Junction-to-Case
R
θJC
* Drain current limited by maximum junction temperature.
1/7
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
